Deformation and removal of semiconductor and laser single crystals at extremely small scales
doi: 10.1088/2631-7990/ab7a2a
- Publish Date: 2020-03-01
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Key words:
- deformation and removal /
- semiconductor /
- laser crystal /
- transmission electron microscopy (TEM) /
- grinding
Abstract:
Semiconductor and laser single crystals are usually brittle and hard, which need to be ground to
have satisfactory surface integrity and dimensional precision prior to their applications.
Improvement of the surface integrity of a ground crystal can shorten the time of a subsequent
polishing process, thus reducing the manufacturing cost. The development of cost-effective
grinding technologies for those crystals requires an in-depth understanding of their deformation
and removal mechanisms. As a result, a great deal of research efforts were directed towards
studying this topic in the past two or three decades. In this review, we aimed to summarize the
deformation and removal characteristics of representative semiconductor and laser single crystals
in accordance with the scale of mechanical loading, especially at extremely small scales. Their
removal mechanisms were critically examined based on the evidence obtained from high-resolution TEM analyses. The relationships between machining conditions and removal
behaviors were discussed to provide a guidance for further advancing of the grinding
technologies for those crystals.