Jiang M R, Gao G Y, Li C. 2026. Unlocking extreme-environment memory operation with 2D material-enabled interfacial engineered memristors. Int. J. Extrem. Manuf. 8 061501.. DOI: 10.1088/2631-7990/ae88d2
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Jiang M R, Gao G Y, Li C. 2026. Unlocking extreme-environment memory operation with 2D material-enabled interfacial engineered memristors. Int. J. Extrem. Manuf. 8 061501.. DOI: 10.1088/2631-7990/ae88d2
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Jiang M R, Gao G Y, Li C. 2026. Unlocking extreme-environment memory operation with 2D material-enabled interfacial engineered memristors. Int. J. Extrem. Manuf. 8 061501.. DOI: 10.1088/2631-7990/ae88d2
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Citation:
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Jiang M R, Gao G Y, Li C. 2026. Unlocking extreme-environment memory operation with 2D material-enabled interfacial engineered memristors. Int. J. Extrem. Manuf. 8 061501.. DOI: 10.1088/2631-7990/ae88d2
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