A perspective on the advanced manufacturing of p-type 2D materials and devices

Two-dimensional (2D) semiconductors are poised to transform next-generation electronics and optoelectronics through their atomic-scale bodies and exceptional tunability by external fields. While n-type 2D materials such as molybdenum disulfide (MoS₂) and indium selenide (InSe) have achieved near-industrial performance, progress in high-quality p-type counterparts has lagged significantly. This imbalance constrains the integration of complementary metal-oxide-semiconductor (CMOS) and limits the realization of efficient 2D p-n junctions for advanced optoelectronics. Overcoming these challenges demands innovations in active channel design, contact engineering, and interface passivation. In this Perspective, we discuss recent advances in the manufacturing of advanced p-type 2D materials and devices, and highlight emerging directions for enabling scalable, high-performance p-type 2D material technologies.