Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Key words: 
• grinding /
• double-grits /
• molecular dynamics /
• damage /
• material removal /
• gallium nitride

Abstract: 

Elucidating the complex interactions between the work material and abrasives during grinding of gallium nitride (GaN) single crystals is an active and challenging research area. In this study, molecular dynamics simulations were performed on double-grits interacted grinding of GaN crystals; and the grinding force, coefficient of friction, stress distribution, plastic damage behaviors, and abrasive damage were systematically investigated. The results demonstrated that the interacted distance in both radial and transverse directions achieved better grinding quality than that in only one direction. The grinding force, grinding induced stress, subsurface damage depth, and abrasive wear increase as the transverse interacted distance increases. However, there was no clear correlation between the interaction distance and the number of atoms in the phase transition and dislocation length. Appropriate interacted distances between abrasives can decrease grinding force, coefficient of friction, grinding induced stress, subsurface damage depth, and abrasive wear during the grinding process. The results of grinding tests combined with cross-sectional transmission electron micrographs validated the simulated damage results, i.e. amorphous atoms, high-pressure phase transition, dislocations, stacking faults, and lattice distortions. The results of this study will deepen our understanding of damage accumulation and material removal resulting from coupling between abrasives during grinding and can be used to develop a feasible approach to the wheel design of ordered abrasives.